Thin film transistor

ABSTRACT

A thin film transistor including an oxide semiconductor with favorable electrical characteristics is provided. The thin film transistor includes a gate electrode provided over a substrate, a gate insulating film provided over the gate electrode, an oxide semiconductor film provided over the gate electrode and on the gate insulating film, a metal oxide film provided on the oxide semiconductor film, and a metal film provided on the metal oxide film. The oxide semiconductor film is in contact with the metal oxide film, and includes a region whose concentration of metal is higher than that of any other region in the oxide semiconductor film (a high metal concentration region). In the high metal concentration region, the metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.12/950,186, filed Nov. 19, 2010, now allowed, which claims the benefitof a foreign priority application filed in Japan as Serial No.2009-265409 on Nov. 20, 2009, both of which are incorporated byreference.

TECHNICAL FIELD

The technical field relates to a thin film transistor including an oxidesemiconductor.

BACKGROUND ART

In recent years, metal oxide having semiconductor characteristics whichis referred to as an oxide semiconductor has attracted attention as anovel semiconductor material which has both high mobility, which is acharacteristic of polysilicon, and uniform element characteristics,which is a characteristic of amorphous silicon. Examples of the metaloxide having semiconductor characteristics are tungsten oxide, tinoxide, indium oxide, zinc oxide, and the like.

Patent Documents 1 and 2 have proposed a thin film transistor in whichmetal oxide having semiconductor characteristics is used for a channelformation region.

REFERENCE

-   [Patent Document 1] Japanese Published Patent Application No.    2007-123861-   [Patent Document 2] Japanese Published Patent Application No.    2007-96055

DISCLOSURE OF INVENTION

It is an object to provide a thin film transistor including an oxidesemiconductor with favorable electrical characteristics.

According to one embodiment of the present invention, a thin filmtransistor includes a gate electrode formed over a substrate, a gateinsulating film formed over the gate electrode, an oxide semiconductorfilm formed over the gate electrode and on the gate insulating film, ametal oxide film formed on the oxide semiconductor film, and a metalfilm formed on the metal oxide film. The oxide semiconductor film is incontact with the metal oxide film, and includes a region whose metalconcentration is higher than that in any other region in the oxidesemiconductor film (a high metal concentration region).

In the high metal concentration region, metal contained in the oxidesemiconductor film may be present as a crystal grain or a microcrystal.

According to another embodiment of the present invention, a thin filmtransistor includes a gate electrode formed over a substrate, a gateinsulating film formed over the gate electrode, an oxide semiconductorfilm containing indium, gallium, and zinc, which is formed over the gateelectrode and on the gate insulating film, a titanium oxide film formedon the oxide semiconductor film, and a titanium film formed on thetitanium oxide film. The oxide semiconductor film is in contact with thetitanium oxide film, and includes a region whose concentration of indiumis higher than that in any other region in the oxide semiconductor film.

In the region whose concentration of indium is higher than that in anyother region in the oxide semiconductor film, indium may be present as acrystal grain or a microcrystal.

A thin film transistor including an oxide semiconductor with favorableelectrical characteristics can be provided.

BRIEF DESCRIPTION OF DRAWINGS

In the accompanying drawings:

FIGS. 1A and 1B show cross sectional schematic views of a thin filmtransistor including an oxide semiconductor;

FIG. 2 shows an energy band diagram between a source electrode and adrain electrode of a thin film transistor including an oxidesemiconductor;

FIGS. 3A to 3C show crystal structures of metal and oxygen in anIn—Ga—Zn—O-based oxide semiconductor;

FIGS. 4A and 4B show diagrams each illustrating a structural model;

FIGS. 5A and 5B show diagrams each illustrating a structural model;

FIGS. 6A and 6B show diagrams each illustrating a structural model;

FIG. 7A shows a graph illustrating C-V characteristics of Sample 1, andFIG. 7B shows a graph illustrating a relation between gate voltage (Vg)and (1/C)² of Sample 1;

FIG. 8A shows a graph illustrating C-V characteristics of Sample 2, andFIG. 8B shows a graph illustrating a relation between gate voltage (Vg)and (1/C)² of Sample 2;

FIG. 9 shows a crystal structure of titanium dioxide having a rutilestructure;

FIG. 10 shows a state density of titanium dioxide having a rutilestructure;

FIG. 11 shows a state density of titanium dioxide having a rutilestructure in an oxygen-deficient state;

FIG. 12 shows a state density of titanium monoxide;

FIGS. 13A and 13B each illustrate an electronic device to which a thinfilm transistor is applied; and

FIG. 14 is a TEM photograph of a thin film transistor including anIn—Ga—Zn—O-based oxide semiconductor.

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiments of the invention are described below with reference to thedrawings. Note that the invention is not limited to the followingdescription, and those skilled in the art can easily understand thatmodes and details of the invention can be changed in various wayswithout departing from the purpose and the scope of the invention.Therefore, it should be noted that the present invention should not beinterpreted as being limited to the following description of theembodiments.

(Embodiment 1)

FIG. 1A is a cross sectional schematic view of a thin film transistorincluding an oxide semiconductor. This thin film transistor is formedusing a substrate 10, a gate electrode 20, a gate insulating film 30, anoxide semiconductor film 40, a metal oxide film 60, a metal film 70, andan insulating film 80.

The thin film transistor shown in FIG. 1A has a bottom gate type with achannel-etched structure. Note that the type and structure of the thinfilm transistor is not limited to this, and a top gate type, a bottomgate type, and the like can be used as appropriate.

As the substrate 10, a substrate having an insulating surface is used.It is appropriate that a glass substrate is used as the substrate 10. Ifthe subsequent thermal treatment is performed at a high temperature, aglass substrate whose strain point is 730° C. or higher may be used. Inaddition, from the viewpoint of heat resistance, a glass substrate whichcontains more barium oxide (BaO) than boric acid (B₂O₃) is preferablyused.

A substrate formed using an insulator such as a ceramic substrate, aquartz glass substrate, a quartz substrate, or a sapphire substrate mayalso be used as the substrate 10 instead of the glass substrate.Alternatively, a crystallized glass substrate or the like may be used asthe substrate 10.

Additionally, an insulating film serving as a base film may be providedbetween the substrate 10 and the gate electrode 20. The base film has afunction of preventing diffusion of an impurity element from thesubstrate 10. Note that the insulating film to be the base film may beformed using any one or more of films selected from a silicon nitridefilm, a silicon oxide film, a silicon nitride oxide film, and a siliconoxynitride film.

A metal conductive film can be used as the gate electrode 20. For amaterial of the metal conductive film, an element selected from aluminum(Al), chromium (Cr), copper (Cu), tantalum (Ta), titanium (Ti),molybdenum (Mo), and tungsten (W); an alloy containing any one of theseelements as its main component; or the like can be used. For example, athree-layer structure of a titanium film, an aluminum film, and atitanium film; a three-layer structure of a molybdenum film, an aluminumfilm, and a molybdenum film; or the like can be used as the metalconductive film. Note that the metal conductive film is not limited to athree-layer structure, and a single layer or a two-layer structure, or astacked structure of four or more layers may be used.

As the gate insulating film 30, a silicon oxide film, a silicon nitridefilm, a silicon oxynitride film, a silicon nitride oxide film, analuminum oxide film, an aluminum nitride film, an aluminum oxynitridefilm, an aluminum nitride oxide film, a hafnium oxide film, or the likecan be used.

As an oxide semiconductor used for the oxide semiconductor film 40, thefollowing metal oxide can be used: five-component metal oxide such as anIn—Sn—Ga—Zn—O-based oxide semiconductor; four-component metal oxide suchas an In—Ga—Zn—O-based oxide semiconductor, an In—Sn—Zn—O-based oxidesemiconductor, an In—Al—Zn—O-based oxide semiconductor, aSn—Ga—Zn—O-based oxide semiconductor, an Al—Ga—Zn—O-based oxidesemiconductor, and a Sn—Al—Zn—O-based oxide semiconductor;three-component metal oxide such as an In—Zn—O-based oxidesemiconductor, a Sn—Zn—O-based oxide semiconductor, an Al—Zn—O-basedoxide semiconductor, a Zn—Mg—O-based oxide semiconductor, aSn—Mg—O-based oxide semiconductor, an In—Mg—O-based oxide semiconductor,and an In—Ga—O-based oxide semiconductor; two-component metal oxide suchas an In—O-based oxide semiconductor, a Sn—O-based oxide semiconductor,and a Zn—O-based oxide semiconductor; or the like. Note that in thisspecification, for example, an In—Sn—Ga—Zn—O-based oxide semiconductormeans metal oxide including indium (In), tin (Sn), gallium (Ga), andzinc (Zn), and the composition ratio thereof is not particularlylimited. Additionally, the oxide semiconductor film 40 may containsilicon oxide (SiO₂).

In addition, for the oxide semiconductor film 40, an oxide semiconductorwith a structure represented by InMO₃(ZnO)_(m) (m>0) can also be used.Note here that M denotes a single metal element or a plurality of metalelements selected from gallium (Ga), aluminum (Al), manganese (Mn), andcobalt (Co). Examples of M are gallium, gallium and aluminum, galliumand manganese, gallium and cobalt, and the like.

Note that, of oxide semiconductors with a structure represented byInMO₃(ZnO)_(m) (m>0), an oxide semiconductor containing gallium (Ga) asM is also referred to as an In—Ga—Zn—O-based oxide semiconductor.

Impurities such as hydrogen, moisture, a hydroxyl group, and hydroxide(also referred to as a hydrogen compound) which act as donors areintentionally eliminated from the oxide semiconductor film 40, and then,oxygen is supplied to the oxide semiconductor film 40 since oxygen isalso reduced in the process of eliminating these impurities. Therefore,the oxide semiconductor film 40 is highly purified and electricallyi-type (intrinsic). This is in order to suppress the fluctuations ofelectrical characteristics of the thin film transistor.

The smaller the amount of hydrogen in the oxide semiconductor film 40is, the closer to i-type the oxide semiconductor film 40 is. Therefore,the concentration of hydrogen contained in the oxide semiconductor film40 may be 5×10¹⁹/cm³ or less, preferably 5×10¹⁸/cm³ or less, morepreferably 5×10¹⁷/cm³ or less, or further more preferably less than5×10¹⁶/cm³. The concentration of the hydrogen can be measured bysecondary ion mass spectrometry (SIMS).

Hydrogen contained in the oxide semiconductor film 40 is eliminated asmuch as possible; thus, the carrier density of the oxide semiconductorfilm 40 is to be less than 5×10¹⁴/cm³, preferably 5×10¹²/cm³ or less, ormore preferably 5×10¹⁰/cm³ or less. The carrier density of the oxidesemiconductor film 40 can be measured in such a manner that a MOScapacitor including the oxide semiconductor film 40 is fabricated, andthen, the results of C-V measurement (C-V characteristics) for the MOScapacitor are evaluated.

Additionally, an oxide semiconductor is a wide band gap semiconductor.The band gap of an In—Ga—Zn—O-based oxide semiconductor is 3.15 eV,while the band gap of silicon is 1.12 eV, for example.

In an oxide semiconductor, which is a wide band gap semiconductor, thedensity of the minority carrier is low and the minority carrier isdifficult to be induced. Thus, it can be said that, in the thin filmtransistor including the oxide semiconductor film 40, tunnel current isdifficult to be generated; consequently, off-state current is difficultto flow. Therefore, off-state current per 1-μm channel width of the thinfilm transistor including the oxide semiconductor film 40 can be 100aA/μm or less, preferably 10 aA/μm or less, or more preferably 1 aA/μmor less.

Additionally, since an oxide semiconductor is a wide band gapsemiconductor, impact ionization and avalanche breakdown are difficultto occur in the thin film transistor including the oxide semiconductorfilm 40. Therefore, it can be said that the thin film transistorincluding the oxide semiconductor film 40 has resistance to hot carrierdeterioration. This is because hot carrier deterioration is mainlycaused by increase in the number of carriers by avalanche breakdown andinjection of the carriers accelerated to high speed to the gateinsulating film.

The metal film 70 is used as a source electrode or a drain electrode.For the metal film 70, a metal material such as aluminum (Al), chromium(Cr), copper (Cu), tantalum (Ta), titanium (Ti), molybdenum (Mo), ortungsten (W); or an alloy material whose main component is any one ofthese metal materials can be used. In addition, the metal film 70 mayhave a structure in which a film of high-melting-point metal formedusing chromium (Cr), tantalum (Ta), titanium (Ti), molybdenum (Mo),tungsten (W), or the like is stacked on one side or the both sides of ametal film formed using aluminum (Al), copper (Cu), or the like. Notethat aluminum to which an element which prevents hillocks or whiskerswhich occur in the aluminum film is added is used as a material; thus,the metal film 70 with high heat resistance can be obtained. Examples ofthe element are silicon (Si), titanium (Ti), tantalum (Ta), tungsten(W), molybdenum (Mo), chromium (Cr), neodymium (Nd), scandium (Sc),yttrium (Y), and the like.

As the metal oxide film 60, a film containing oxide of the metalcontained in the metal film 70 can be used. For example, in the casewhere the metal film 70 is a film containing titanium, a titanium oxidefilm or the like can be used as the metal oxide film 60.

Further, the oxide semiconductor film 40 is in contact with the metaloxide film 60 and includes a region whose metal concentration is higherthan that in any other region in the oxide semiconductor film 40. Theregion with the higher metal concentration is also referred to as a highmetal concentration region 50.

FIG. 1B is an enlarged cross sectional schematic view of a region 100 inFIG. 1(A).

As shown in FIG. 1B, in a high metal concentration region 50, metalcontained in the oxide semiconductor film 40 may be present as a crystalgrain or a microcrystal.

FIG. 2 is an energy-band diagram (a schematic diagram) between a sourceelectrode and a drain electrode in the thin film transistor with astructure shown in FIGS. 1A and 1B. FIG. 2 illustrates the case where adifference between a potential of a source electrode and a potential ofa drain electrode is zero.

Here, the high metal concentration region 50 is dealt as metal. Inaddition, the impurities are eliminated from the oxide semiconductorfilm 40 as much as possible and oxygen is supplied to the oxidesemiconductor film 40; thus, the oxide semiconductor film 40 is highlypurified and electrically i-type (intrinsic). As a result, in theenergy-band diagram, Fermi level (Ef) of the inside of the oxidesemiconductor film 40 is placed near the middle of the band gap.

From this energy-band diagram, it can be found that there is no barrierat an interface between the high metal concentration region 50 and anyother region in the oxide semiconductor film 40 and a favorable contactcan be obtained. The same is true of an interface between the high metalconcentration region 50 and the metal oxide film 60, and an interfacebetween the metal oxide film 60 and the metal film 70.

(Embodiment 2)

A process of manufacturing a thin film transistor with a structure shownin FIGS. 1A and 1B will be described.

First, after a conductive film is formed over the substrate 10 having aninsulating surface, the gate electrode 20 is formed by a firstphotolithography step.

A resist mask used in the first photolithography step may be formed byan inkjet method. When a resist mask is formed by an inkjet method,photo masks are not used, so that the manufacturing cost can be reduced.

Next, the gate insulating film 30 is formed over the gate electrode 20.

The gate insulating film 30 is formed by a plasma CVD method, asputtering method, or the like. As the gate insulating film 30, a filmformed using silicon oxide, silicon nitride, silicon oxynitride, siliconnitride oxide, aluminum oxide, aluminum nitride, aluminum oxynitride,aluminum nitride oxide, hafnium oxide, or the like is preferably used.

The gate insulating film 30 in contact with the oxide semiconductor film40 is required to be a dense film with high withstand voltage.Therefore, a dense film with high withstand voltage which is formed by ahigh density plasma CVD method using μ wave (2.45 GHz) is especiallysuitable for the gate insulating film 30.

A property of an interface between the gate insulating film 30 obtainedin the above manner, which is a dense film with high withstand voltage,and the oxide semiconductor film 40 which has been i-type in such amanner that the impurities are eliminated therefrom as much as possibleand oxygen is supplied thereto is improved.

If a property of the interface between the oxide semiconductor film 40and the gate insulating film 30 was not preferable, a band between theimpurity and a main component of the oxide semiconductor would be brokenin a gate bias-temperature stress test (a BT test: 85° C., 2×10⁶ V/cm,12 hours); as a result, a threshold voltage shift would be caused due toa generated dangling bond.

The gate insulating film 30 may have a stacked structure of a nitrideinsulating film and an oxide insulating film. For example, the gateinsulating film 30 with a stacked structure can be formed in such amanner that a silicon nitride film (SiN_(y) (y>0)) having a thickness of50 nm to 200 nm inclusive is formed by a sputtering method as a firstgate insulating film, and then a silicon oxide film (SiO_(x) (x>0))having a thickness of 5 nm to 300 nm inclusive is formed as a secondgate insulating film on the first gate insulating film. The thickness ofthe gate insulating film 30 may be determined as appropriate dependingon a property required for the thin film transistor, and may beapproximately 350 nm to 400 nm inclusive.

Preferably, as pretreatment before forming the gate insulating film 30,the substrate 10 provided with the gate electrode 20 may be preheated ina preheating chamber of sputtering apparatus, so that impurities such ashydrogen and moisture absorbed in the substrate 10 are removed andeliminated. This preheating is performed for the reason that theimpurities such as hydrogen and moisture are not contained as far aspossible in the gate insulating film 30 and the oxide semiconductor film40 which are subsequently formed. Alternatively, the substrate 10 may bepreheated at the time when the gate insulating film 30 is formedthereover.

The appropriate temperature of preheating is 100° C. to 400° C.inclusive. The temperature of 150° C. to 300° C. inclusive is morepreferable. Additionally, a cryopump is appropriately used for anexhaustion unit in the preheating chamber.

Next, the oxide semiconductor film 40 is formed on the gate insulatingfilm 30. The appropriate thickness of the oxide semiconductor film 40 is2 nm to 200 nm inclusive.

The oxide semiconductor film 40 is formed by a sputtering method. Thefilm formation by the sputtering method is performed in a rare gas(typically argon) atmosphere, an oxygen atmosphere, or a mixedatmosphere containing a rare gas and oxygen.

As a target used for forming the oxide semiconductor film 40 by thesputtering method, metal oxide including zinc oxide as a main componentcan be used. Alternatively, a target for forming an oxide semiconductorcontaining indium (In), gallium (Ga), and zinc (Zn) having the relativeproportion of In₂O₃:Ga₂O₃:ZnO=1:1:1 [mol %], or In:Ga:Zn=1:1:0.5 [atom%], In:Ga:Zn=1:1:1 [atom %], or In:Ga:Zn=1:1:2 [atom %] can also beused. In addition, the appropriate fill rate of the target for formingthe oxide semiconductor is 90% to 100% inclusive. The fill rate of 95%to 99.9% inclusive is more preferable. This is because a denser oxidesemiconductor film can be formed when the target for forming the oxidesemiconductor with a high fill rate is used.

Before the oxide semiconductor film 40 is formed, the substrate 10 isplaced in a treatment chamber in a reduced pressure state, and thesubstrate 10 is heated to a temperature higher than or equal to roomtemperature and lower than 400° C. After that, while residual moistureleft in the treatment chamber is eliminated and a sputtering gas fromwhich hydrogen and moisture have been eliminated is introduced to thechamber, voltage is applied between the substrate 10 and the target, sothat the oxide semiconductor film 40 is formed over the substrate 10.

It is appropriate that a sorption vacuum pump is used for the exhaustionunit for removing residual moisture left in the treatment chamber.Examples of the pump are a cryopump, an ion pump, a titanium sublimationpump, and the like. Alternatively, a turbo pump provided with a coldtrap can be used for the exhaustion unit. From the treatment chamber, ahydrogen atom, a hydrogen molecule, a compound including a hydrogenatom, such as water (H₂O), or the like (more preferably, together with acompound including a carbon atom) is eliminated; thus, the concentrationof impurities contained in the oxide semiconductor film 40 which isformed in the treatment chamber can be reduced. Additionally, filmformation by a sputtering method is performed while residual moistureleft in the treatment chamber is eliminated with a cryopump; thus, thetemperature of the substrate 10 at the time of forming the oxidesemiconductor film 40 can be higher than or equal to room temperatureand lower than 400° C.

Note that before the oxide semiconductor film 40 is formed by asputtering method, dust on a surface of the gate insulating film 30 maybe preferably removed by reverse sputtering. The reverse sputteringrefers to a method in which a substrate surface is cleaned with reactiveplasma generated by voltage application to the substrate side using anRF power source without voltage application to a target side. Note thatthe reverse sputtering is performed in an argon atmosphere.Alternatively, nitrogen, helium, oxygen, or the like may be used insteadof argon.

After the oxide semiconductor film 40 is formed, the oxide semiconductorfilm 40 is subjected to dehydration or dehydrogenation. It isappropriate that the heat treatment for dehydration or dehydrogenationis performed at 400° C. to 750° C. inclusive; in particular, thepreferable temperature is 425° C. or higher. Note that although the heattreatment may be performed for one hour or less when the treatment isperformed at 425° C. or higher, the heat treatment is preferablyperformed for more than one hour when the treatment is performed atlower than 425° C. In this specification, “dehydrogenation” does notindicate only elimination of a hydrogen molecule (H₂) by this heattreatment. For convenience, elimination of a hydrogen atom (H), ahydroxy group (OH), and the like is also referred to as “dehydration ordehydrogenation.”

For example, the substrate 10 which is provided with the oxidesemiconductor film 40 is put in an electric furnace which is a kind ofheat treatment apparatus and heat treatment is performed in a nitrogenatmosphere. After that, a high-purity oxygen gas, a high-puritydinitrogen monoxide (N₂O) gas, or an ultra-dry air (a mixed gas ofnitrogen and oxygen at the ratio of nitrogen to oxygen, which is 4:1,having a dew point of lower than or equal to −40° C., preferably lowerthan or equal to −60° C.) is introduced into the same furnace andcooling is performed. It is preferable that water, hydrogen, and thelike be not included in the oxygen gas or the dinitrogen monoxide (N₂O)gas. In addition, it is appropriate that the purity of an oxygen gas ora dinitrogen monoxide (N₂O) gas is 6N (99.9999%) or more preferably 7N(99.99999%) or more (i.e., the concentration of the impurities in theoxygen gas or the dinitrogen monoxide (N₂O) gas is 1 ppm or less, morepreferably 0.1 ppm or less).

Note that the heat treatment apparatus is not limited to the electricfurnace, and an RTA (rapid thermal annealing) apparatus such as a GRTA(gas rapid thermal annealing) apparatus or an LRTA (lamp rapid thermalannealing) apparatus can be used, for example.

In addition, heat treatment for the dehydration or dehydrogenation ofthe oxide semiconductor film 40 can be performed for the oxidesemiconductor film 40 before or after the oxide semiconductor film 40 isprocessed into an island shape in a second photolithography step.

Through the above processes, the entire region of the oxidesemiconductor film 40 is in an oxygen-excess state, and thus the entireregion of the oxide semiconductor film 40 has high resistance and isi-type.

Next, the metal film 70 is stacked over the gate insulating film 30 andon the oxide semiconductor film 40. The metal film 70 may be formed by asputtering method, a vacuum evaporation method, or the like. Inaddition, the metal film 70 may have a single layer structure or astacked structure of two or more layers.

After that, a resist mask is formed over the metal film 70 by a thirdphotolithography step. The resist mask is selectively etched, so that asource electrode and a drain electrode are formed. Then, the resist maskis removed.

The channel length of the thin film transistor is determined dependingon the distance between a bottom edge of the source electrode and abottom edge of the drain electrode which are adjacent to each other overthe oxide semiconductor film 40. That is, it can be said that thechannel length of the thin film transistor is determined depending onthe conditions of the light exposure whereby the resist mask is formedin the third photolithography process. For the light exposure forforming the resist mask in the third photolithography process,ultraviolet, KrF laser, or ArF laser can be used. In addition, in thecase where the cannel length is shorter than 25 nm, the light exposuremay be performed with extreme ultraviolet, whose wave length isextremely short, that is, several nanometers to several tens nanometersinclusive. This is because the light exposure with extreme ultravioletcan provide a high resolution and a large focus depth. Therefore, thechannel length of the thin film transistor can be 10 nm to 1000 nminclusive depending on the kind of light used for the light exposure.

Note that materials for the metal film 70 and materials for the oxidesemiconductor film 40, and etching conditions need to be adjusted asappropriate so that the oxide semiconductor film 40 is not removed whenthe metal film 70 is etched.

For example, when a titanium film is used as the metal film 70 and anIn—Ga—Zn—O-based oxide semiconductor film is used as the oxidesemiconductor film 40, an ammonia hydrogen peroxide solution (a mixtureliquid of ammonia, water, and a hydrogen peroxide solution) may be usedas an etchant.

Note that it is acceptable that the oxide semiconductor film 40 has agroove (a depression portion) by being etched only partly in the thirdphotolithography step. The resist mask used for forming the sourceelectrode and the drain electrode may be formed by an inkjet method.When a resist mask is formed by an inkjet method, photo masks are notused; therefore, the manufacturing cost can be reduced.

Water (absorbed water) or the like on a surface of the oxidesemiconductor film 40 which is not covered may be eliminated by plasmatreatment with a gas such as dinitrogen monoxide (N₂O), nitrogen (N₂),or argon (Ar) after the source electrode and the drain electrode areformed. In the plasma treatment, a mixed gas of oxygen and argon canalso be used.

In the case where the plasma treatment is performed, the insulating film80 which is in contact with part of the oxide semiconductor film 40 isformed without exposing the oxide semiconductor film 40 to air. In thethin film transistor shown in FIG. 1A, the oxide semiconductor film 40is in contact with the insulating film 80 at the portion of the oxidesemiconductor film 40 which is not covered with the metal film 70.

As an example of the insulating film 80, a silicon oxide film havingdefects is given. The silicon oxide film is formed in the followingmanner: the substrate 10 which is provided with the oxide semiconductorfilm 40 and the metal film 70 is heated at a temperature higher than orequal to room temperature and lower than 100° C.; a sputtering gascontaining high-purity oxygen from which hydrogen and moisture have beeneliminated is introduced; and a silicon target is used.

The insulating film 80 is preferably formed while residual moisture leftin the treatment chamber is eliminated. This is in order to prevent theoxide semiconductor film 40 and the insulating film 80 from containinghydrogen, hydroxy group, and moisture.

It is appropriate that a sorption vacuum pump is used for the exhaustionunit for eliminating residual moisture from the treatment chamber.Examples of the pump are a cryopump, an ion pump, a titanium sublimationpump, and the like. Alternatively, a turbo pump provided with a coldtrap can be used for the exhaustion unit. From the treatment chamber, ahydrogen atom, a hydrogen molecule, a compound including a hydrogenatom, such as water (H₂O), and the like are eliminated; thus, theconcentration of impurities contained in the insulating film 80 which isformed in the treatment chamber can be reduced.

Note that as the insulating film 80, a silicon oxynitride film, analuminum oxide film, or an aluminum oxynitride film in addition to asilicon oxide film can be used.

After the insulating film 80 is formed, heat treatment is performedunder an atmosphere of an inert gas or an atmosphere of a nitrogen gasat a temperature of 100° C. to 400° C. inclusive, or preferably at atemperature higher than or equal to 150° C. and lower than 350° C. Oncethe heat treatment is performed, the impurities such as hydrogen,moisture, hydroxy group, and hydride contained in the oxidesemiconductor film 40 is diffused into the insulating film 80 havingdefects. As a result, the impurities contained in the oxidesemiconductor film 40 can be further reduced.

In addition, by the heat treatment, the metal oxide film 60 is formed atthe interface between the oxide semiconductor film 40 and the metal film70 and the high metal concentration region 50 is formed at a region inthe oxide semiconductor film 40 which is in contact with the metal oxidefilm 60.

Note that the metal oxide film 60 may be formed on the oxidesemiconductor film 40 by a sputtering method before the metal film 70 isformed. In this case, the thin film transistor shown in FIGS. 1A and 1Bis obtained in such a manner that the metal oxide film 60 is removedfrom the region on the oxide semiconductor film 40 which is not to becovered with the metal film 70 after the metal oxide film 60 is formedon the oxide semiconductor film 40.

Further, the above heat treatment may be performed before the insulatingfilm 80 is formed.

Through the above process, the thin film transistor with a structureshown in FIGS. 1A and 1B can be formed.

(Embodiment 3)

Phenomena, in the thin film transistor with a structure shown in FIGS.1A and 1B, where the metal oxide film 60 is formed at the interfacebetween the oxide semiconductor film 40 and the metal film 70 and thehigh metal concentration region 50 is formed at a region in the oxidesemiconductor film 40 which is in contact with the metal oxide film 60were examined by computational science, and the results will bedescribed.

In the following calculation, the case where the oxide semiconductorfilm 40 is an In—Ga—Zn—O-based oxide semiconductor film was considered.In addition, the case where the metal film 70 is a tungsten (W) film, amolybdenum (Mo) film, or a titanium (Ti) film was considered.

[Phenomenon in which the High Metal Concentration Region 50 is Formed]

Energy which is necessary for oxide of each of indium, gallium, and zinccontained in an In—Ga—Zn—O-based oxide semiconductor to form anoxygen-deficient state (deficiency formation energy E_(def)) wascalculated.

The deficiency formation energy E_(def) is defined by Formula 1 shown asfollows.

[Formula 1]E _(def) =E(A _(m)O_(n-1))+E(O)−E(A _(m)O_(n))  (1)

Note that E(A_(m)O_(n-1)) represents energy of oxide with oxygendeficiency A_(m)O_(n-1), E(O) represents energy of an oxygen atom, andE(A_(m)O_(n)) represents energy of oxide without oxygen deficiencyA_(m)O_(n). In addition, A represents one of the following: indium;gallium; zinc; or a combination of indium, gallium, and zinc.

Additionally, a relation between a concentration of oxygen deficiency nand the deficiency formation energy E_(def) is approximately representedby Formula 2 shown as follows.

$\begin{matrix}\left\lbrack {{Formula}\mspace{14mu} 2} \right\rbrack & \; \\{n = {N\;{\exp\left( {- \frac{E_{def}}{k_{B}T}} \right)}}} & (2)\end{matrix}$

Note that N represents the number of oxygen atoms in a state wheredeficiency is not formed, k_(B) represents Boltzmann constant, and Trepresents absolute temperature.

From Formula 2, it was found that when the deficiency formation energyE_(def) is increased, the concentration of oxygen deficiency n, that is,the amount of oxygen deficiency is decreased.

For the calculation of the deficiency formation energy E_(def), CASTEP,which is a calculation program for a density functional theory, wasused. A plane-wave-basis pseudopotential method was used as the densityfunctional theory, and GGA-PBE was used for a functional. The cut-offenergy was set to 500 eV. The number of grids at k point was set asfollows: 3×3×1 for oxide containing indium, gallium, and zinc(hereinafter, also referred to as IGZO); 2×2×2 for indium oxide(hereinafter, also referred to as In₂O₃); 2×3×2 for gallium oxide(hereinafter, also referred to as Ga₂O₃); and 4×4×1 for zinc oxide(hereinafter, also referred to as ZnO).

As a crystal structure of IGZO, a structure where 84 atoms obtained bydoubling a structure of a symmetry R-3 (international number: 148) bothin the a-axis direction and in the b-axis direction were arranged sothat energy of Ga and Zn was minimized was employed. Crystal structuresof In₂O₃, Ga₂O₃, and ZnO were a bixbyite structure of 80 atoms, aβ-gallia structure of 80 atoms, and an wurtzite structure of 80 atoms,respectively.

Table 1 shows values of the deficiency formation energy E_(def) in thecases where A in Formula 1 is indium; gallium; zinc; and a combinationof indium, gallium, and zinc. Additionally, FIGS. 3A to 3C show crystalstructures of metal and oxygen in the In—Ga—Zn—O-based oxidesemiconductor.

TABLE 1 Compound E_(def) (eV) In₂O₃ 3.06 ZnO 3.75 IGZO (Model 1) 3.73IGZO (Model 2) 3.98 IGZO (Model 3) 4.08 Ga₂O₃ 4.18

The value of the deficiency formation energy E_(def) of IGZO (Model 1)corresponds to the deficiency formation energy of oxygen adjacent tothree indium atoms and one zinc atom in an IGZO crystal in the casewhere A is a combination of indium, gallium, and zinc (see FIG. 3A).

The value of the deficiency formation energy E_(def) of IGZO (Model 2)corresponds to the deficiency formation energy of oxygen adjacent tothree indium atoms and one gallium atom in an IGZO crystal in the casewhere A is a combination of indium, gallium, and zinc (see FIG. 3B).

The value of the deficiency formation energy E_(def) of IGZO (Model 3)corresponds to the deficiency formation energy of oxygen adjacent to twozinc atoms and two gallium atoms in an IGZO crystal in the case where Ais a combination of indium, gallium, and zinc (see FIG. 3C).

The larger the value of the deficiency formation energy E_(def) is, themore energy is needed for formation of an oxygen-deficient state. Thatis, it was suggested that the larger the value of the deficiencyformation energy E_(def) is, the stronger the bond between oxygen andmetal tends to be. In other words, from Table 1, it could be said thatindium, whose value of the deficiency formation energy E_(def) was thelowest, had the weakest bond with oxygen.

An oxygen-deficient state in an In—Ga—Zn—O-based oxide semiconductor wasformed because the metal film 70 used for a source electrode or a drainelectrode extracts oxygen from the oxide semiconductor film 40. Part ofthe oxide semiconductor film 40 which was thus brought into anoxygen-deficient state became the high metal concentration region 50.The carrier density of the oxide semiconductor film 40 varies at leastby two digits depending on the presence of this high metal concentrationregion 50. This is because oxygen was extracted from the oxidesemiconductor film 40, and the oxide semiconductor film 40 thus becamen-type. Note that to be n-type means to be in a state where the numberof electrons which are majority carriers increases.

[Phenomenon in which the Metal Oxide Film 60 is Formed]

Quantum molecular dynamic (QMD) simulation was performed on a stackedstructure of the oxide semiconductor film 40 using the In—Ga—Zn—O-basedoxide semiconductor and the metal film 70. This is in order to confirmextraction of oxygen from the oxide semiconductor by metal.

A structure for the calculation was manufactured in the followingmanner. First, structural optimization using a QMD method was performedon an amorphous In—Ga—Zn—O-based oxide semiconductor (hereinafter, alsoreferred to as a-IGZO) formed by a classical molecular dynamic (CMD)method. Further, by cutting the structure-optimized unit cell, a-IGZOfilms were obtained. On the a-IGZO films, metal films having crystals ofrespective metal atoms (W, Mo, and Ti) were stacked. After that, themanufactured structures were structurally optimized. Each of thesestructures was used as a starting object, and calculation was performedusing the QMD method at 623.0 K. Note that the lower end of each of thea-IGZO films and the top end of each of the metal films were fixed sothat only interaction at the interface could be estimated.

Calculation conditions for the CMD calculation are shown below.Materials Explorer was used for a calculation program. The a-IGZO wasformed under the following conditions. The all 84 atoms were arranged atrandom in a simulation cell with a side of 1 nm at a ratio ofIn:Ga:Zn:O=1:1:1:4, and the density was set to 5.9 g/cm³. The CMDcalculation was performed with an NVT ensemble, and the temperature wasgradually lowered from 5500 K to 1 K. After that, structural relaxationwas performed at 1 K for 10 ns. The total calculation time was 10 nswith time intervals of 0.1 fs. As for potentials, a Born-Mayer-Hugginspotential was applied to a metal-oxygen bond and an oxygen-oxygen bond,and a Lennard-Jones potential was applied to a metal-metal bond. Chargeswere set as follows: +3 for In, +3 for Ga, +2 for Zn, and −2 for O.

Calculation conditions for the QMD calculation are shown below. A firstprinciple calculation software, CASTEP, was used for a calculationprogram. GGA-PBE was used for a functional. Ultrasoft was used for apseudopotential. The cut-off energy was set to 260 eV, and the k-pointwas set to 1×1×1. The QMD calculation was performed with the NVTensemble, and the temperature was 623 K. The total calculation time was2.0 ps with time intervals of 1.0 fs.

The results of the above calculations are described with reference tostructural models shown in FIGS. 4A and 4B, FIGS. 5A and 5B, and FIGS.6A and 6B. In FIGS. 4A and 4B, FIGS. 5A and 5B, and FIGS. 6A and 6B, awhite sphere represents a crystalline metal atom contained in a metalfilm stacked on the a-IGZO film, and a black sphere represents an oxygenatom.

FIGS. 4A and 4B show structural models in which a metal film containinga crystal of tungsten (W) was stacked on the a-IGZO film. FIG. 4Acorresponds to the structure before the QMD calculation, and FIG. 4Bcorresponds to the structure after the QMD calculation.

FIGS. 5A and 5B show structural models in which a metal film containinga crystal of molybdenum (Mo) was stacked on the a-IGZO film. FIG. 5Acorresponds to the structure before the QMD calculation, and FIG. 5Bcorresponds to the structure after the QMD calculation.

FIGS. 6A and 6B show structural models in which a metal film containinga crystal of titanium (Ti) was stacked on the a-IGZO film. FIG. 6Acorresponds to the structure before the QMD calculation, and FIG. 6Bcorresponds to the structure after the QMD calculation.

From FIG. 5A and FIG. 6A, it could be found that oxygen atoms havealready moved to the metal film before the structural optimization isperformed in the case where a metal film containing a crystal ofmolybdenum or titanium is stacked on the a-IGZO film. In addition, fromthe comparison among FIG. 4B, FIG. 5B, and FIG. 6B, it could be foundthat the largest number of oxygen atoms move to the metal film in thecase where a metal film containing a crystal of titanium is stacked onthe a-IGZO film. Therefore, when titanium was used as the metal, oxygenwas extracted from an oxide semiconductor by metal the most frequently.The results indicated that a metal film containing a titanium crystalwas the most optimal as an electrode leading to the oxygen deficiency inthe a-IGZO film.

[Carrier Density of Oxide Semiconductor Film 40]

The fact that the metal contained in the metal film 70 extracts oxygenfrom the oxide semiconductor film 40 was evaluated by actuallyfabricating an element. Specifically, the carrier density of the oxidesemiconductor film 40 was calculated both in the case where the metalfilm capable of extracting oxygen was stacked on the oxide semiconductorfilm and in the case where the metal film incapable of extracting oxygenwas stacked on the oxide semiconductor film; then, the results werecompared.

The carrier density of the oxide semiconductor film can be obtained insuch a manner that an MOS capacitor including an oxide semiconductorfilm is fabricated and the results of the C-V measurement (the C-Vcharacteristics) for the MOS capacitor are evaluated.

The carrier density was measured in the following steps 1 to 3: (1) toobtain a C-V characteristics diagram on which the relation between thegate voltage (Vg) and capacitance (C) of the MOS capacitor are plotted;(2) to obtain a graph showing the relation between the gate voltage (Vg)and (1/C)² with the use of the C-V characteristics, and to determine thedifferential value of (1/C)² in a weak inversion region in the graph;and (3) to substitute the determined differential value into Formula 3,which is shown below, representing the carrier density (Nd).

$\begin{matrix}\left\lbrack {{Formula}\mspace{14mu} 3} \right\rbrack & \; \\{N_{d} = {{- \left( \frac{2}{e\; ɛ_{0}ɛ} \right)}/\frac{\mathbb{d}\left( {1/C} \right)^{2}}{\mathbb{d}V}}} & (3)\end{matrix}$

Note that e represents an electrical element amount, ∈₀ representsvacuum dielectric constant, and ∈ represents relative dielectricconstant of an oxide semiconductor.

As samples for the measurement, an MOS capacitor including a metal filmcapable of extracting oxygen (hereinafter, also referred to as Sample1), and an MOS capacitor including a metal film incapable of extractingoxygen (hereinafter, also referred to as Sample 2) were prepared. Notethat a titanium film was used for the metal film that is effective inextracting oxygen. As the metal film that is not effective in extractingoxygen, a film including a titanium film and a titanium nitride filmprovided on the surface of the titanium film (on the oxide semiconductorside) was used.

The details of the samples are as follows: Sample 1 includes a titaniumfilm of 400 nm in thickness over a glass substrate, an oxidesemiconductor film of 2 μm in thickness including an amorphousIn—Ga—Zn—O-based oxide semiconductor (a-IGZO) on the titanium film, asilicon oxynitride film of 300 nm in thickness on the oxidesemiconductor film, and a silver film of 300 nm in thickness on thesilicon oxynitride film; and Sample 2, a titanium film of 300 nm inthickness over a glass substrate, a titanium nitride film of 100 nm inthickness on the titanium film, an oxide semiconductor film of 2 μm inthickness including an amorphous In—Ga—Zn—O-based oxide semiconductor(a-IGZO) on the titanium nitride film, a silicon oxynitride film of 300nm in thickness on the oxide semiconductor film, and a silver film of300 nm in thickness on the silicon oxynitride film.

Note that the oxide semiconductor films included in Sample 1 and Sample2 were formed by a sputtering method using a target for forming theoxide semiconductor film containing indium (In), gallium (Ga), and zinc(Zn) (In:Ga:Zn=1:1:0.5 [atom %]). In addition, the atmosphere forforming the oxide semiconductor films was a mixed atmosphere of argon(Ar) and oxygen (O₂) (Ar:O₂=30 (sccm):15 (sccm)).

FIG. 7A shows the C-V characteristics of Sample 1. In addition, FIG. 7Bshows the relation between the gate voltage (Vg) and (1/C)² of Sample 1.The differential value of (1/C)² in a weak inversion region in FIG. 7Bwas substituted into Formula 3; thus, the carrier density of the oxidesemiconductor film was determined to be 1.8×10¹²/cm³.

FIG. 8A shows the C-V characteristics of Sample 2. In addition, FIG. 8Bshows the relation between the gate voltage (Vg) and (1/C)² of Sample 2.The differential value of (1/C)² in a weak inversion region in FIG. 8Bwas substituted into Formula 3; thus, the carrier density of the oxidesemiconductor film was determined to be 6.0×10¹⁰/cm³.

From the above results, it was found that the values of the carrierdensity of the oxide semiconductor film shift by two digits from eachother in the case of the MOS capacitor including a metal film capable ofextracting oxygen (Sample 1), and the MOS capacitor including a metalfilm incapable of extracting oxygen (Sample 2). This suggested thatoxygen was extracted from the oxide semiconductor film by the metal filmand the oxygen deficiency increased in the oxide semiconductor film;thus, the oxide semiconductor film in contact with the metal film becamen-type. Note that to be n-type means to be in a state where the numberof electrons which are majority carriers increases.

[Conductivity of Titanium Oxide Film]

Taking into consideration the above calculation results, the case wherethe metal film 70 is a metal film containing a titanium crystal in thethin film transistor shown in FIGS. 1A and 1B was considered.

At the interface between the In—Ga—Zn—O-based oxide semiconductor film(corresponding to the oxide semiconductor film 40 in FIGS. 1A and 1B)and a titanium film (corresponding to the metal film 70 in FIGS. 1A and1B), oxygen which is extracted by titanium reacts titanium; thus, atitanium oxide film (corresponding to the metal oxide film 60 in FIGS.1A and 1B) was formed. Next, the verification results of theconductivity of this titanium oxide film obtained by computationalscience are shown.

Titanium dioxide had several crystal structures such as a rutilestructure (high temperature tetragonal crystal), an anatase structure(low temperature tetragonal crystal), and a brookite structure(orthorhombic crystal). Since both the anatase structure and thebrookite structure are, by being heated, irreversibly changed into therutile structure, which is the most stable structure, the above titaniumdioxide was assumed to have the rutile structure.

FIG. 9 shows a crystal structure of titanium dioxide having a rutilestructure. The rutile structure is a tetragonal crystal and belongs tothe space group, which is a description of the symmetry of the crystal,of P42/mnm. Note that titanium dioxide having an anatase structure alsobelongs to the space group, which is a description of the symmetry ofthe crystal, of P42/mnm like the titanium dioxide having the rutilestructure.

Simulation for obtaining a state density was performed on the abovecrystal structure of titanium dioxide by a density functional theoryusing a GGA-PBE functional. With symmetry maintained, the structureincluding the cell structure was optimized and the state density wascalculated. For calculation by a density functional theory, a plane wavepseudopotential method using the CASTEP code was used. The cut-offenergy was set to 380 eV.

FIG. 10 shows a state density of titanium dioxide having a rutilestructure. From FIG. 10, it was found that titanium dioxide having therutile structure has a band gap, and that it has a state density similarto that of a semiconductor. Note that, in the density functional theory,the band gap tends to be estimated small; therefore, the actual band gapof titanium dioxide is approximately 3.0 eV, which is larger than theband gap shown in the state density shown by FIG. 10. Note that sincecalculation of electron state using a density functional theory wasperformed at absolute zero; therefore, an origin of energy is Fermilevel.

FIG. 11 shows a state density of titanium dioxide having a rutilestructure in an oxygen-deficient state. Titanium oxide containing 24 Tiatoms and 47 O atoms, which is obtained by removing one O atom fromtitanium oxide containing 24 Ti atoms and 48 O atoms, was used as amodel for the simulation. As shown in FIG. 11, in the oxygen-deficientstate, Fermi level is in the conductive band and the state density atFermi level is not zero. From this, it was found that the titaniumdioxide with oxygen deficiency has n-type conductivity.

FIG. 12 shows a state density of titanium monoxide (TiO). As shown inFIG. 12, it was found that titanium monoxide has a state density likethat of metal.

From the state density of titanium dioxide in FIG. 10, the state densityof titanium dioxide including oxygen deficiency in FIG. 11, and thestate density of titanium monoxide in FIG. 12, it was expected thattitanium dioxide including oxygen deficiency (TiO_(2-δ)) has n-typeconductivity when 0<δ<1. Therefore, even in the case where a titaniumoxide film (the metal oxide film 60) contains titanium monoxide, ortitanium dioxide including oxygen deficiency as its component, currentflow is hardly blocked between an In—Ga—Zn—O-based oxide semiconductorfilm (the oxide semiconductor film 40) and a titanium film (the metalfilm 70).

(Embodiment 4)

The thin film transistor described in the above Embodiments can beapplied to a variety of electronic devices (including an amusementmachine). Examples of electronic devices include a television set (alsoreferred to as a television or a television receiver), a monitor of acomputer or the like, a camera such as a digital camera or a digitalvideo camera, a digital photo frame, a mobile phone set (also referredto as a mobile phone or a mobile phone device), a portable game console,a portable information terminal, an audio reproducing device, alarge-sized game machine such as a pachinko machine, a solar panel, andthe like. Some examples of the electronic devices to which the thin filmtransistor described in the above Embodiments is applied are describedbelow with reference to FIGS. 13A and 13B.

FIG. 13A shows one example of the mobile phone set to which the thinfilm transistor described in the above Embodiments is applied. Thismobile phone set includes a display portion 121 provided in a housing120.

When the display portion 121 is touched with a finger or the like, datacan be input into the mobile phone. In addition, operations such asmaking calls and composing mails can be also conducted by touching thedisplay portion 121 with a finger or the like.

For example, as a switching element in the pixel of the display portion121, a plurality of the thin film transistors described in the aboveEmbodiments are arranged; thus, the performance of this mobile phone setcan be improved.

FIG. 13B shows one example of the television set to which the thin filmtransistor described in the above Embodiments is applied. In thistelevision set, a display portion 131 is provided in a housing 130.

For example, as a switching element in the pixel of the display portion131, a plurality of the thin film transistors described in the aboveEmbodiments are arranged; thus, the performance of this television setcan be improved.

As described above, the thin film transistors described in the aboveEmbodiments are arranged in a display portion of a variety of electricdevices; thus, the performance of the electric devices can be improved.

[Example 1]

FIG. 14 shows a photograph of a cross section of a thin film transistorin which the In—Ga—Zn—O-based oxide semiconductor is used. Thephotograph was taken with a transmission electron microscope (TEM:“H-9000 NAR” manufactured by Hitachi, Ltd.) with the accelerationvoltage at 300 kV.

The thin film transistor shown in FIG. 14 was obtained in such a mannerthat an In—Ga—Zn—O-based oxide semiconductor film of 50 nm in thicknesswas formed as the oxide semiconductor film 40, a first heat treatment(650° C., 1 hour) was performed under a nitride atmosphere, a titaniumfilm of 150 nm in thickness was formed as the metal film 70, andfurther, a second heat treatment (250° C., 1 hour) was performed under anitrogen atmosphere.

In FIG. 14, it was confirmed that the metal oxide film 60 was formed atan interface between the oxide semiconductor film 40 and the metal film70. In addition, it was confirmed that the high metal concentrationregion 50 was formed in the region in the oxide semiconductor film 40which is in contact with the metal oxide film 60. Note that, from theresults of analysis using a FFTM (fast fourier transform mapping)method, it was found that a crystal having a composition similar to thatof indium (In) was formed in the high metal concentration region 50 ofthis thin film transistor. In the same manner, it was found that atitanium oxide film was formed as the metal oxide film 60.

This application is based on Japanese Patent Application Serial No.2009-265409 filed on Nov. 20, 2009 with the Japanese Patent Office, theentire contents of which are hereby incorporated by reference.

The invention claimed is:
 1. A transistor comprising: a gate electrode;a gate insulating film overlapping with the gate electrode; an oxidesemiconductor film overlapping with the gate electrode with the gateinsulating film interposed therebetween; and a titanium film overlappingwith the oxide semiconductor film, wherein the oxide semiconductor filmcontains at least one of indium, gallium, and zinc, wherein the oxidesemiconductor film includes a first region and a second region, whereinthe first region and the second region overlap with the titanium film,wherein the first region is closer to the titanium film than the secondregion, wherein the first region is in the vicinity of the titaniumfilm, and wherein a concentration of indium in the first region ishigher than a concentration of indium in the second region.
 2. Thetransistor according to claim 1, wherein a type of the transistor is abottom gate type.
 3. The transistor according to claim 1, wherein theoxide semiconductor film comprises In—Ga—Zn—O-based oxide semiconductor.4. The transistor according to claim 1, wherein a concentration ofhydrogen in the oxide semiconductor film is less than 5×10¹⁶/cm³.
 5. Thetransistor according to claim 1, wherein the first region includes acrystal of indium.
 6. A transistor comprising: a gate electrode; a gateinsulating film overlapping with the gate electrode; an oxidesemiconductor film overlapping with the gate electrode with the gateinsulating film interposed therebetween; and a film in contact with theoxide semiconductor film, the film comprising titanium and oxygen, atitanium film in contact with the film, wherein the oxide semiconductorfilm contains at least one of indium, gallium, and zinc, wherein theoxide semiconductor film includes a first region and a second region,wherein the first region and the second region overlap with the film,wherein the first region is closer to the film than the second region,wherein the first region is in the vicinity of the film, and wherein aconcentration of indium in the first region is higher than aconcentration of indium in the second region.
 7. The transistoraccording to claim 6, wherein a type of the transistor is a bottom gatetype.
 8. The transistor according to claim 6, wherein the oxidesemiconductor film comprises In—Ga—Zn—O-based oxide semiconductor. 9.The transistor according to claim 6, wherein a concentration of hydrogenin the oxide semiconductor film is less than 5×10¹⁶/cm³.
 10. Thetransistor according to claim 6, wherein the first region includes acrystal of indium.
 11. A transistor comprising: a gate electrode; a gateinsulating film overlapping with the gate electrode; an oxidesemiconductor film overlapping with the gate electrode with the gateinsulating film interposed therebetween; a film in contact with theoxide semiconductor film, the film comprising titanium and oxygen; and atitanium film in contact with the film, wherein the oxide semiconductorfilm contains at least one of indium, gallium, and zinc, wherein theoxide semiconductor film includes a first region and a second region,wherein the first region and the second overlap with the film, whereinthe first region is closer to the film than the second region, whereinthe first region is in the vicinity of the film, wherein a concentrationof any one of indium, gallium and zinc in the first region is higherthan a concentration thereof in the second region, and wherein the firstregion comprises a crystal grain or a microcrystal including any one ofindium, gallium and zinc.
 12. The transistor according to claim 10,wherein a type of the transistor is a bottom gate type.
 13. Thetransistor according to claim 10, wherein the oxide semiconductor filmcomprises In—Ga—Zn—O-based oxide semiconductor.
 14. The transistoraccording to claim 10, wherein a concentration of hydrogen in the oxidesemiconductor film is less than 5×10¹⁶/cm³.
 15. The transistor accordingto claim 10, wherein the first region includes a crystal of indium.